jiangsu changjiang electr onics technology co., l td sod-523 plastic-encapsulate diodes BZX584C5V1H ze ner diode features ? planar die construction ? general purp ose, medium current ? ideally suited for automat ed assembly processes ? av ailable in lead free version marking: h8 maximum ratings(t a =25 unless otherwise specified) symbol paramete r value unit p d pow er dissipation(note 1) 250 mw r ja thermal resist ance from junction to ambient 833 /w t j operating junc tion temperature 150 t stg st orage temperature range -55~+150 electrical chara cteristics(t a =25 unless otherwise specified) parame ter symbol test conditions min typ max unit zene r voltage range (note 2) v z i zt =5 ma 5.1 5.5 v z zt i zt =5 ma 50 maximum zen er impedance(note 3) z zk i zk =1 ma 450 ? v r =2v 2 maximum re verse current (note 2) i r v r =4.2v 50 a fo rward voltage (note 2) v f i f = 10ma 0.9 v notes: 1. 2.short durati on test pulse used to minimize self-heating effect. 3. f=1kh z sod-523 www.cj-elec.com 1 device mounted on a 1 in . ceramic pcb which spread 2 ounces of copper. 2 d,mar,2016
z z z f m h o h f f r p 6 2 ' 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 ' 6 x j j h v w h g 3 d g / d \ r x w a 0. 510 0.770 0.020 0.031 a1 0.500 0.700 0.020 0.028 b 0.250 0.350 0.010 0.014 c 0.080 0.150 0.003 0.006 d 0.750 0.850 0.030 0.033 e 1.100 1.300 0.043 0.051 e1 1.500 1.700 0.059 0.067 e2 l 0.010 0.070 0.001 0.003 7 r e f
7 ref 0.200 ref 0.008 ref d,mar,2016
z z z f m h o h f f r p 6 2 ' 7 d s h d q g 5 h h o d,mar,2016
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